Band-engineered In2O3/Mo-PrInO heterostructure thin-film transistors: enhancing carrier mobility and ensuring operational stability through interface modulation

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Authors: Shaojie Jin, Yuexin Yang, Dongxiang Luo, Zhennan Zhu, Honglong Ning, Guoping Su, Han He, Jiahao Zheng, Rihui Yao, Junbiao Peng
Cited by: 1
References: 38

Fields of Study & Subjects

Thin-Film Transistor Technologies ZnO doping and properties Transition Metal Oxide Nanomaterials

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
208
Pages
110500–110500
Publication date
10 February 2026
Language
EN