Band-engineered In2O3/Mo-PrInO heterostructure thin-film transistors: enhancing carrier mobility and ensuring operational stability through interface modulation
Fields of Study & Subjects
Thin-Film Transistor Technologies
ZnO doping and properties
Transition Metal Oxide Nanomaterials
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 208
- Pages
- 110500–110500
- Publication date
- 10 February 2026
- Language
- EN