High power GaN HEMTs unleashed: Epitaxial design and strategies

Materials Science in Semiconductor Processing 2026

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Authors: Muhammad Farizuan, Tan Weng-Hooi, Zhao Haocheng, Amirul Firdaus, Hiroshi Kawarada, Shaili Falina, Mohd Faddli Syamsul

DOI: 10.1016/j.mssp.2026.110543

Cited by: 1

References: 259

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Silicon Carbide Semiconductor Technologies

References 259