Low-temperature Cu-Cu bonding enabled by a simulated interface approach: process optimization and interfacial mechanisms of Ar plasma activation and glycine wet treatment
Fields of Study & Subjects
3D IC and TSV technologies
Electronic Packaging and Soldering Technologies
Copper Interconnects and Reliability
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 209
- Pages
- 110566–110566
- Publication date
- 5 March 2026
- Language
- EN