A review of plasma-induced damage and interface recovery in GaN-based materials etching processes
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Plasma Diagnostics and Applications
Ga2O3 and related materials
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 209
- Pages
- 110568–110568
- Publication date
- 12 March 2026
- Language
- EN