Implementation of artificial synapses using resistive random access memory with Pt-doped HfO2/Al2O3 bilayer stack

Materials Science in Semiconductor Processing 2026 Open access

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Authors: Jinyan Pan, Liangcheng Guan, Menglong Wu, Zhenghan Zheng, Jing Zhou, Zhenping Wang, Yunlong Gao, Yuxiang Lin

DOI: 10.1016/j.mssp.2026.110569

Cited by: 0

References: 33

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Phase-change materials and chalcogenides

References 33