High-resolution characterization of nitrogen doping concentration uniformity in n-type 4H-SiC wafers based on near-ultraviolet photoluminescence

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Authors: Dapeng Chang, Mengyan Li, Xiufang Chen, Xianglong Yang, Muqing Zhang, Xuejian Xie, Xuanyi Zhao, Hui Chen, Jiaxin Zhang, Xiangang Xu
Cited by: 2
References: 26

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
209
Pages
110580–110580
Publication date
8 March 2026
Language
EN