High-resolution characterization of nitrogen doping concentration uniformity in n-type 4H-SiC wafers based on near-ultraviolet photoluminescence
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Integrated Circuits and Semiconductor Failure Analysis
Silicon and Solar Cell Technologies
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 209
- Pages
- 110580–110580
- Publication date
- 8 March 2026
- Language
- EN