Influence of CF4 and SF6 plasma-induced surface chemistry on barrier height and contact resistivity of Ti/Al contacts to p-type 4H-SiC

Materials Science in Semiconductor Processing 2026

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Authors: Jaeyong Choi, Donghwi Kim, Daehan Won, Hyunjun Kim, Jeong‐Soo Lee

DOI: 10.1016/j.mssp.2026.110593

Cited by: 0

References: 47

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and interfaces Silicon and Solar Cell Technologies

References 47