A revisit on the “reliability test” methodologies for GaN based lateral high electron mobility transistors (HEMTs) in terrestrial power applications

Materials Science in Semiconductor Processing 2026

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Authors: Abdul Shabir, Cher Ming Tan, Hawaibam Thoithoi Singh

DOI: 10.1016/j.mssp.2026.110632

Cited by: 1

References: 97

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advanced Power Amplifier Design Silicon Carbide Semiconductor Technologies

References 97