Forming-free resistive switching characteristics of RF-sputtered Ga2O3-based memristors

Materials Science in Semiconductor Processing 2026

View at publisher

Authors: Hye Ryeong Lee, Hye Jin Lee, Dabin Jeon, Sung‐Nam Lee

DOI: 10.1016/j.mssp.2026.110648

Cited by: 1

References: 21

Fields of Study & Subjects

Ga2O3 and related materials Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices

References 21