Defect engineering in NiO/β-Ga2O3 p-n heterojunction diodes via post-deposition annealing for power electronics

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Authors: Seung-Hyun Park, Chowdam Venkata Prasad, Minseok Kim, Soo-Young Moon, Ji-Hyun Kim, Chang-Jun Park, Ye-Jin Kim, Geon-Hee Lee, Sang-Mo Koo
Cited by: 1
References: 49

Fields of Study & Subjects

Ga2O3 and related materials Advanced Photocatalysis Techniques GaN-based semiconductor devices and materials

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
211
Pages
110743–110743
Publication date
30 April 2026
Language
EN