Defect engineering in NiO/β-Ga2O3 p-n heterojunction diodes via post-deposition annealing for power electronics
Fields of Study & Subjects
Ga2O3 and related materials
Advanced Photocatalysis Techniques
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 211
- Pages
- 110743–110743
- Publication date
- 30 April 2026
- Language
- EN