Morphotropic phase boundary (MPB)-engineered HfO2 to reduce coercive field (Ec) for energy-efficient FeFETs

Materials Science in Semiconductor Processing 2026

View at publisher

Authors: J.Y. Lee, J.-Y. Lee, Z.-F. Luo, M. H. Lee

DOI: 10.1016/j.mssp.2026.110806

Cited by: 1

References: 16

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices

References 16