Interface-driven faceted GaAs/Si(331) epitaxy: A reproducible growth route to lateral nanocorrugation and in-plane optical anisotropy

Materials Science in Semiconductor Processing 2026

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Authors: R. Méndez-Camacho, E. Cruz-Hernández, E.H. Sánchez-Martínez, M.A. Zambrano-Serrano, E.A. Cerda-Méndez, M.A. Vidal, M. López-López
DOI: 10.1016/j.mssp.2026.110834
Cited by: 1
References: 32

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Nanowire Synthesis and Applications Silicon and Solar Cell Technologies

Publication details

Journal / source
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Volume
214
Pages
110834–110834
Publication date
2 June 2026
Language
EN