Role of interface layer and charge trapping in resistive switching of YBCO/Nb:SrTiO3 junctions
Fields of Study & Subjects
Advanced Memory and Neural Computing
Magnetic and transport properties of perovskites and related materials
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Materials Science in Semiconductor Processing
- Publisher
- Elsevier BV
- Volume
- 215
- Pages
- 110982–110982
- Publication date
- 13 July 2026
- Language
- EN