Optimization of In2O3 doping concentration for high-performance ZrO2-based metal-insulator-metal capacitors

Materials Today Communications 2026 Open access

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Authors: Jonghwan Jeong, S. M. Kim, Hanseok Jeong, Sanjo Lee, Yoona Choi, Jihun Nam, Woojin Jeon
DOI: 10.1016/j.mtcomm.2026.114818
Cited by: 0
References: 25

Abstract

ZrO 2 offers a high dielectric constant and a stable tetragonal crystal structure; however, its performance is limited by leakage current issues arising from scaling. In 2 O 3 doping effectively promotes the formation of the tetragonal phase in ZrO 2 without inducing defect formation or chemical state changes. At the DRAM operating voltage of +0.8 V, the films maintained an excellent leakage current density (

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Copper Interconnects and Reliability

Publication details

Journal / source
Materials Today Communications
Volume
51
Pages
114818–114818
Publication date
1 February 2026
Language
EN