Interface-engineered mixed-dimensional GaS/GaN heterojunction for low-noise ultraviolet photodetector and imaging
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Ga2O3 and related materials
Photocathodes and Microchannel Plates
Publication details
- Journal / source
- Nano Energy
- Publisher
- Elsevier BV
- Volume
- 149
- Pages
- 111738–111738
- Publication date
- 19 January 2026
- Language
- EN