Unraveling scattering contributions to the nonlinear Hall effect in topological insulator Bi2Te3

The nonlinear Hall effect (NLHE) offers an efficient, ultrafast method for converting alternating-current (AC) signals into direct-current (DC) power without threshold voltages or complex fabrication, enabling compact next-generation rectifiers and ambient energy harvesters. NLHE arises from both the Berry curvature dipole (BCD) and scattering mechanisms; while BCD requires broken inversion symmetry, scattering-driven contributions can occur even in systems with 3-fold rotational symmetry, providing a more general pathway for nonlinear transport. However, the quantitative contributions of different scattering sources remain insufficiently understood, limiting material and device optimization. In this study, we systematically identify and quantify three distinct scattering channels—static disorder (impurities), dynamic disorder (phonons), and their hybridization—that govern the temperature-dependent NLHE in high-quality exfoliated Bi 2 Te 3 . The importance of each mechanism varies with temperature, and understanding their roles lays a foundation for designing high-performance NLHE-based devices.