Suppression of phonon emission by Auger recombination-assisted carrier transfer in 1D/2D heterojunctions

Bi 1.3 In 0.7 Se 3 nanowire, whose band gap has been opened by doping, falls short of expectations in a broad-spectrum photodetector, raising suspicions that optoelectronic energy is being dissipated in the form of phonons. This work proves that a coherent phonon-generated oscillatory signal at approximately 1.29 GHz is responsible for approximately 46.9% of the total energy loss. The Auger recombination is introduced to suppress such oscillations, and by constructing 1D/2D heterojunctions, photogenerated carriers are transferred to the 2D material WSe 2 . After that, the light response from ultraviolet to near-infrared is enhanced, with the visible band specifically increasing 35.6%. The key mechanism is the interlayer electric field, generated by charge transfer, whose effectiveness is validated by the signal amplification and a 64 meV blueshift of the WSe 2 B exciton. This study provides a practical way to minimize coherent phonon oscillation and boost efficiency through carrier transfer, enhancing the device's detection efficiency by nearly 10-fold.