Implantation studies of low-energy positive muons in niobium thin films

DORA PSI (Paul Scherrer Institute) 2026 Open access

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Authors: Ryan M. L. McFadden, Andreas Suter, Leon Ruf, Angelo Di Bernardo, Arnold Milenko Müller, Thomas Prokscha, Z. Salman, Tobias Junginger
DOI: 10.1016/j.nimb.2025.165954
Cited by: 1
References: 103

Abstract

Here we study the range of ke V positive muons μ+ implanted in Nb2O5 (x nm)/Nb(y nm)/SiO2(300 nm)/Si [x=3.6nm,3.3nm; y=42.0nm,60.1nm] thin films using low-energy muon spin spectroscopy (LE-μSR). At implantation energies 1.3keV ≤ E ≤ 23.3keV, we compare the measured diamagnetic μ+ signal fraction fdia. against predictions derived from implantation profile simulations using the TRIM.SP Monte Carlo code. Treating the implanted μ+ as light protons p+, we find that simulations making use of updated stopping cross section data are in good agreement with the LE-μSR measurements, in contrast to parameterizations found in earlier tabulations. Implications for other studies relying on accurate μ+ stopping information are discussed.

Fields of Study & Subjects

Muon and positron interactions and applications Neutrino Physics Research Particle Detector Development and Performance

Publication details

Journal / source
DORA PSI (Paul Scherrer Institute)
Publisher
Elsevier BV
Volume
570
Pages
165954
Publication date
1 January 2026
Language
EN