Surface characterizations and lattice strains of GaN thin films induced by 8 MeV 129Xe19+ ion irradiation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 2026

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Authors: Shuang Liu, Liqing Zhang, Yang GAO, Siyu Long, Hongxian Chen, Zhengru Lin, Yuelong Yang, Ni Tang, Rong Hua Qiu
DOI: 10.1016/j.nimb.2026.166073
Cited by: 1
References: 38

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ion-surface interactions and analysis X-ray Spectroscopy and Fluorescence Analysis

Publication details

Journal / source
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Publisher
Elsevier BV
Volume
574
Pages
166073–166073
Publication date
4 March 2026
Language
EN