Effect of AlGaN insertion layer in barriers on the optoelectronic characteristics of red light-emitting InGaN/GaN multi-quantum wells

Optics Communications 2026 Open access

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Authors: Wei Liu, Chengrui Yan, Di Wang, Zheng Liu, Bohan Shi, Runzhi Wang, Yujia Liu

DOI: 10.1016/j.optcom.2026.132979

Cited by: 0

References: 24

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices solar cell performance optimization

References 24