Impacts of SiH4 molar flow rate on structural and electrical properties of high-Al-composition semi-polar n-AlGaN epi-layers

Optical Materials 2026

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Authors: Shijie Chen, Liang Li, Zhifeng Yang, Xiaoting Shen, Xiong Zhang

DOI: 10.1016/j.optmat.2026.118001

Cited by: 0

References: 25

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Acoustic Wave Resonator Technologies

References 25