Bias-selectable dual-band mid-wavelength infrared photodetector based on bandgap-engineered InAs/GaSb superlattices

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Authors: Jixing Yang, Jing Yu, Zekun Chen, Yongao Zhao, Lidan Lu, Weiqiang Chen, Yanming Song, Yuegang Fu, Lianqing Zhu
Cited by: 1
References: 37

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Thermal Radiation and Cooling Technologies Superconducting and THz Device Technology

Publication details

Journal / source
Optical Materials
Publisher
Elsevier BV
Volume
178
Pages
118263–118263
Publication date
18 June 2026
Language
EN