Bias-selectable dual-band mid-wavelength infrared photodetector based on bandgap-engineered InAs/GaSb superlattices
Fields of Study & Subjects
Advanced Semiconductor Detectors and Materials
Thermal Radiation and Cooling Technologies
Superconducting and THz Device Technology
Publication details
- Journal / source
- Optical Materials
- Publisher
- Elsevier BV
- Volume
- 178
- Pages
- 118263–118263
- Publication date
- 18 June 2026
- Language
- EN