Incorporation of ZnSnN₂ and InN δ-layers in InGaN/GaN Quantum Wells: Toward efficient long-wavelength III-nitride LEDs

Photonics and Nanostructures - Fundamentals and Applications 2026

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Authors: Anup Gorai
DOI: 10.1016/j.photonics.2026.101518
Cited by: 1
References: 51

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials 2D Materials and Applications

Publication details

Journal / source
Photonics and Nanostructures - Fundamentals and Applications
Publisher
Elsevier BV
Volume
70
Pages
101518–101518
Publication date
24 January 2026
Language
EN