Effect of aluminum capping layer thickness on scattering mechanisms in a-IGTO thin-film transistors

Physica B Condensed Matter 2026

View at publisher

Authors: Jin-Ha Hwang, Hyuck‐In Kwon, Sang-Hun Song

DOI: 10.1016/j.physb.2026.418398

Cited by: 0

References: 15

Fields of Study & Subjects

Thin-Film Transistor Technologies Organic Electronics and Photovoltaics Advancements in Semiconductor Devices and Circuit Design

References 15