Pressure induced B2→ F d 3 ‾ m transition and metal–narrow bandgap semiconductor transition in CuSc intermetallic compound
Fields of Study & Subjects
Electronic Packaging and Soldering Technologies
Intermetallics and Advanced Alloy Properties
Semiconductor materials and interfaces
Publication details
- Journal / source
- Physica B Condensed Matter
- Publisher
- Elsevier BV
- Volume
- 730
- Pages
- 418461–418461
- Publication date
- 28 February 2026
- Language
- EN