Combined effects of high-intensity electric field and well width on Stark shift and tunneling-induced third-order optical nonlinearities of a GaAsSb/GaAs Morse quantum well

View at publisher
Authors: Habeeb Al-behadili, Azadeh Haghighatzadeh, Amin Attarzadeh
Cited by: 1
References: 32

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Quantum optics and atomic interactions Semiconductor Lasers and Optical Devices

Publication details

Journal / source
Physica E Low-dimensional Systems and Nanostructures
Publisher
Elsevier BV
Volume
183
Pages
116584–116584
Publication date
27 May 2026
Language
EN