Combined effects of high-intensity electric field and well width on Stark shift and tunneling-induced third-order optical nonlinearities of a GaAsSb/GaAs Morse quantum well
Fields of Study & Subjects
Semiconductor Quantum Structures and Devices
Quantum optics and atomic interactions
Semiconductor Lasers and Optical Devices
Publication details
- Journal / source
- Physica E Low-dimensional Systems and Nanostructures
- Publisher
- Elsevier BV
- Volume
- 183
- Pages
- 116584–116584
- Publication date
- 27 May 2026
- Language
- EN