Two-dimensional ferromagnetic materials: Enabling next-generation spintronics at the nanoscale

Read full text
Authors: Tianxiao Nie, Weiran Xie, Jing Li, Jihang Gao, Hangtian Wang, Jingyi Peng, Hao Liu, Yuanzhi Song, Peiyuan Yu, Ying Zhang, Fan Gao, Zili Wang
+5 more Ao Du, Jie M. Zhang, Guodong Wei, Zhimei Sun, Weisheng Zhao
Cited by: 2
References: 213

Abstract

The discovery of intrinsic two-dimensional ferromagnetic materials (2D FMs) with long-range magnetic order has revolutionized spintronics field, offering unprecedented opportunities for developing ultra-compact, low-power, and non-volatile devices. This comprehensive review surveys the latest advancements in this rapidly evolving field. In this work, we first outline the fundamental concepts and unique physical properties of diverse 2D FMs, categorized into transition metal halides, dichalcogenides, and ternary compounds, highlighting representative materials like CrI 3 , CrTe 2 , Fe 3 GeTe 2 , and Fe 3 GaTe 2 that exhibit magnetism down to the monolayer limit and, crucially, above room temperature. Next, we discuss various synthesis techniques for obtaining high-quality 2D FMs, such as mechanical exfoliation, molecular beam epitaxy (MBE), and chemical vapor deposition (CVD). Subsequently, we delve into critical strategies for manipulating their magnetic characteristics, including strain engineering, electric field modulation, interface effects (proximity, stacking, twist angle), and elemental doping, enabling precise control over Curie temperature, magnetic anisotropy, and switching behavior. The core of the review focuses on key spintronic phenomena leveraged in 2D FMs, such as efficient spin-orbit torque (SOT) switching, exchange bias effects, and the stabilization of magnetic skyrmions, emphasizing their underlying mechanisms and tunability. On this basis, we extensively examine the application of 2D FMs in pioneering spintronic devices, including spin valves and magnetic tunnel junctions (MTJs) demonstrating significant magnetoresistance at room temperature, as well as other emerging devices like spin transistors, neuromorphic components, and terahertz emitters. Finally, we discuss the current challenges and provide perspectives on future research directions aimed at addressing obstacles in material synthesis, stability, and integration. This review underscores the transformative potential of 2D FMs in reshaping information storage, processing, and sensing technologies at the atomic scale.

Fields of Study & Subjects

Heusler alloys: electronic and magnetic properties 2D Materials and Applications Magnetic properties of thin films

Publication details

Journal / source
Review of Materials Research
Publisher
Elsevier BV
Volume
2
Issue
1
Pages
100145–100145
Publication date
1 January 2026
Language
EN