Fabrication of a GaN-on-diamond HEMT device using 30-mm-square mosaic-diamond substrate

View at publisher
Authors: Yusuke Shirayanagi, Shingo Tomohisa, Keiji Kasamura, Hiroki Toyoda, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Akihisa Kubota, Takashi Takenaga
Cited by: 1
References: 14

Fields of Study & Subjects

GaN-based semiconductor devices and materials Metal and Thin Film Mechanics Diamond and Carbon-based Materials Research

Publication details

Journal / source
Scripta Materialia
Publisher
Elsevier BV
Volume
278
Pages
117260–117260
Publication date
5 March 2026
Language
EN