Generalization of the two-diode IV model for background-doped thermophotonic LEDs

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Authors: Jasper van Gastel, Pyry Kivisaari, Seyed Ahmad Shahahmadi, Benoît Behaghel, Natasha Gruginskie, Luc van der Krabben, Jani Oksanen, Elias Vlieg, John J. Schermer
Cited by: 1
References: 21

Abstract

In recent work, shifted-junction LEDs were developed that yield extremely low non-radiative losses. However, their IV curves show features that standard two-diode models cannot explain. In this work, these features are described using a generalization of the two-diode model that employs a non-radiative current starting at an ideality factor n i d = 1 , that saturates to n i d = 2 behavior beyond a threshold voltage. This saturating diode (SD) model works particularly well for IV curves that show neither a clear n i d = 1 or n i d = 2 regime. The SD model is verified using drift–diffusion simulations and measured IV curves of shifted-junction LEDs. Subsequently, this framework is applied to establish the radiative current and coupling efficiency required to reach wall-plug efficiencies surpassing unity, which is required for electroluminescent cooling. Specifically, it is demonstrated that the device parameters required to reach the cooling regime have all been achieved separately, albeit in different devices, assuming the radiative current changes in line with what is expected at high light extraction efficiencies from previous numerical studies.

Fields of Study & Subjects

Optical properties and cooling technologies in crystalline materials Thermal Radiation and Cooling Technologies GaN-based semiconductor devices and materials

Publication details

Journal / source
Solar Energy Materials and Solar Cells
Publisher
Elsevier BV
Volume
303
Pages
114398–114398
Publication date
28 April 2026
Language
EN