Enhanced Ion/Ioff ratio and controlled threshold voltage in multi-layer MoS2 transistors thinned by a reactive-ion etching process
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Solid State Communications
- Volume
- 411
- Pages
- 116376–116376
- Publication date
- 24 February 2026
- Language
- EN