Mixed finite element method for device simulations

This paper presents a new numerical approach for simulating semiconductor devices using the Mixed Finite Element Method (Mixed FEM). Compared to the standard finite element method, Mixed FEM enables a more accurate treatment of material discontinuities, resulting in improved carrier density simulation across heterogeneous interfaces. Our main contribution is the implementation of Mixed FEM for semiconductor equations involving heterogeneous material interfaces, using the open-source, parallel finite element library MoFEM, thereby providing an extensible platform for future research. In particular, the Mixed FEM formulation results in a specific block-matrix structure that is compatible with GPU acceleration, paving the way for efficient large-scale device simulations. • Mixed-FEM describes discontinuity of materials at the interfaces better than standard FEM because of solving the main fields in L2 Lebesgue space. • Mixed-FEM reproduces expected device characteristics for PN junction, MOS-Cap. • Mixed-FEM enable efficient simulation of large-scale problems through the use of block solvers and GPU acceleration.