Numerical analysis of defects passivation for tungsten-doped indium oxide thin film transistors by using hydrogen peroxide as cosolvent in a supercritical fluid system

Solid-State Electronics 2026

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Authors: Zeqiu Tang, Kai‐Jhih Gan, Kuei‐Shu Chang‐Liao, Zefu Zhao, Jialong Xiang, Bojun Zhang, Chih-Cheng Chin, Yi-Hsuan Cheng, Cheng-Chang Yu, Po-Chung Huang, Chao-Yi Fang, Dun‐Bao Ruan
DOI: 10.1016/j.sse.2026.109347
Cited by: 0
References: 31

Fields of Study & Subjects

Thin-Film Transistor Technologies Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Solid-State Electronics
Volume
234
Pages
109347–109347
Publication date
16 February 2026
Language
EN