Investigation of cap layer effects on low-contact-resistance vanadium-based Au-free low-temperature ohmic contacts for AlGaN/GaN HEMT

Solid-State Electronics 2026

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Authors: Zijing Xie, Xiao Ma, Xinghuan Li, Jun Tang, Hong Wang

DOI: 10.1016/j.sse.2026.109351

Cited by: 0

References: 22

Fields of Study & Subjects

Semiconductor materials and interfaces GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies

References 22