Anomalous punch-through current behavior in GaN due to trap-assisted space charge limited conduction triggered by threading dislocations with an edge component

Solid-State Electronics 2026 Open access

Read full text
Authors: Walter Gonçalez Filho, Matteo Borga, Albert Minj, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Anurag Vohra, Stefaan Decoutere, Benoit Bakeroot
DOI: 10.1016/j.sse.2026.109371
Cited by: 0
References: 27

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor materials and devices Ga2O3 and related materials

Publication details

Journal / source
Solid-State Electronics
Publisher
Elsevier BV
Volume
235
Pages
109371–109371
Publication date
23 April 2026
Language
EN