Deactivation phenomena of highly B-doped SiGe epitaxial films subjected to nanosecond laser annealing followed by rapid thermal annealing
Fields of Study & Subjects
Silicon and Solar Cell Technologies
Semiconductor Quantum Structures and Devices
Semiconductor materials and interfaces
Publication details
- Journal / source
- Surfaces and Interfaces
- Publisher
- Elsevier BV
- Volume
- 84
- Pages
- 108589–108589
- Publication date
- 24 January 2026
- Language
- EN