Deactivation phenomena of highly B-doped SiGe epitaxial films subjected to nanosecond laser annealing followed by rapid thermal annealing

View at publisher
Authors: Chunghee Jo, Dae-Hong Ko
Cited by: 1
References: 60

Fields of Study & Subjects

Silicon and Solar Cell Technologies Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces

Publication details

Journal / source
Surfaces and Interfaces
Publisher
Elsevier BV
Volume
84
Pages
108589–108589
Publication date
24 January 2026
Language
EN