Microtubes and nanomembranes by ion-beam-induced exfoliation of β-Ga2O3

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Authors: Duarte Magalhães Esteves, Rujie He, Calliope Bazioti, S. Magalhães, Margaret Sequeira, Luís F. Santos, Alexander Azarov, Andrej Kuznetsov, Flyura Djurabekova, K. Lorenz, M. Peres
Cited by: 4
References: 73

Abstract

This paper reports an innovative process to fabricate β -Ga 2 O 3 microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that the detachment and rolling-up of a thin surface layer, forming a microtube, can be promoted by the implantation-induced strain profile. The strain-disorder interplay was investigated in detail for Cr-implanted β -Ga 2 O 3 with complementary methods, showing an excellent agreement between experiments and simulations, and suggesting an exfoliation mechanism that is correlated with the anisotropic nature of the β -Ga 2 O 3 monoclinic system and its easy-cleavage planes. Moreover, these microtubes are transferrable to other substrates and can be unrolled under thermal annealing, resulting in nanomembranes with bulk-like crystalline quality. A study of the evolution of the implantation-induced damage under annealing showed a remarkable recovery at moderate temperatures (∼500°C). This method thus shows potential for the scalable production of nanomembranes and can be realized employing any ion species, providing simultaneous doping.

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and devices ZnO doping and properties

Publication details

Journal / source
Surfaces and Interfaces
Volume
88
Pages
109066–109066
Publication date
19 March 2026
Language
EN