Three stages of Si transformation into SiC by the method of coordinated substitution of atoms

View at publisher
Authors: S. A. Kukushkin, Е. В. Убыйвовк, M.G. Vorob'ev, А. С. Гращенко, Andrei V. Osipov
Cited by: 0
References: 39

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and interfaces Diamond and Carbon-based Materials Research

Publication details

Journal / source
Thin Solid Films
Volume
839
Pages
140908–140908
Publication date
12 March 2026
Language
EN