Improved electrical characteristics of p-substrate Ge MOS and Ge nMOSFET with appropriate rapid oxidation on hafnium nitride interfacial layer

Vacuum 2026

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Authors: Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Guan-Ting Liu, Yi-Hsuan Cheng, Chih-Cheng Chin, Jia‐Cheng Liu, Zefu Zhao, Kai‐Jhih Gan

DOI: 10.1016/j.vacuum.2026.115065

Cited by: 0

References: 29

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Silicon and Solar Cell Technologies

References 29