Corrigendum to “Investigating the impact of rapid thermal annealing atmosphere on the properties of sputtered SnO thin films with a tellurium capping layer” [Vacuum 247 (2026) 115148]
Fields of Study & Subjects
Thin-Film Transistor Technologies
ZnO doping and properties
Chalcogenide Semiconductor Thin Films
Publication details
- Journal / source
- Vacuum
- Volume
- 247
- Pages
- 115174–115174
- Publication date
- 11 February 2026
- Language
- EN