Control of powder recrystallization and crystallization interface shape for 8-inch SiC crystal growth by PVT method

Vacuum 2026

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Authors: Quanzhi Wang, Zeqi Zhong, Shanshan Tang, Runguang Hu, Zaoyang Li, Dongli Hu, Lijun Liu

DOI: 10.1016/j.vacuum.2026.115228

Cited by: 0

References: 20

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Advanced ceramic materials synthesis Solidification and crystal growth phenomena

References 20