Mitigating half-select disturb in an 11T SRAM cell using a single bitline for high stability and low power consumption
Fields of Study & Subjects
Low-power high-performance VLSI design
VLSI and Analog Circuit Testing
Radiation Effects in Electronics
Publication details
- Journal / source
- Integration
- Publisher
- Elsevier BV
- Volume
- 111
- Pages
- 102848–102848
- Publication date
- 8 August 2026
- Language
- EN