Step-by-Step Shouldering Growth of (100) β-Ga2O3 with Large Thickness
Abstract
Abstract β-Ga2O3 crystals are anisotropic, which is also reflected in their growth habits. This is manifested in the occurrence of phenomena such as miscellaneous crystals and twin crystals due to the competition between different crystal planes, which affects the growth of large sizes. However, this anisotropic growth is not all a drawback; instead, it can be utilized to achieve the growth of specific crystal planes. In this article, by analyzing the growth dynamics mechanism of different crystal planes of β-Ga2O3, we qualitatively determined the suitable growth intervals for different crystal planes, and actively designed the thermal field and growth process that meet the requirements, successfully achieving the expected results. We conducted phased control over the shoulder expansion of (100) plane, obtaining high-quality β-Ga2O3 single crystals.
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
Copper-based nanomaterials and applications
Publication details
- Journal / source
- Crystal Growth & Design
- Publisher
- American Chemical Society (ACS)
- Volume
- 26
- Issue
- 12
- Pages
- 4453–4458
- Publication date
- 26 May 2026
- Language
- EN