Large-Scale Self-Catalyzed Growth of Dense GaAs Nanowires with Near-Unity Vertical Yield and Lot-to-Lot Reproducibility on SiO x /Si(111) Wafers via Droplet Etching
Abstract
Building on the established Ga droplet etching (DE) technique on SiO x, we report a scalable and reproducible method for the self-catalyzed vapor–liquid–solid growth of GaAs nanowires (NWs) on 2-in. SiO x /Si(111) wafers using molecular beam epitaxy. By systematically varying only the Ga deposition time during DE, the number density of vertical NWs can be tuned over 2 orders of magnitude (from low-10 7 to high-10 8 cm –2 ). We identify a threshold Ga deposition time above which uniform, untapered NW arrays with high-density (>10 8 cm –2 ) and near-unity vertical yield (>99%) are obtained, exhibiting low reflectance (
Fields of Study & Subjects
Nanowire Synthesis and Applications
Semiconductor Quantum Structures and Devices
Optical Coatings and Gratings
Publication details
- Journal / source
- Crystal Growth & Design
- Publisher
- American Chemical Society (ACS)
- Volume
- 26
- Issue
- 3
- Pages
- 1393–1402
- Publication date
- 13 January 2026
- Language
- EN