Resistive Switching Behavior in Lead-Free Double Perovskite Cs 2 SnCl 6 for Multilevel Flexible Device Application

Double halide perovskite resistive random-access memory (RRAM) has become a frontier research direction in next-generation optoelectronic memory due to its rapid resistive switching characteristics based on ion migration. Among them, lead-free tin-based double halide perovskites exhibit enormous application potential and research value, thanks to their excellent environmental friendliness, enhanced stability, and ideal optoelectronic functional properties. Herein, Ag/Cs 2 SnCl 6 &PMMA (poly(methyl methacrylate))/ITO (indium tin oxide) resistive random-access memory (RRAM) devices were fabricated using a composite of PMMA and Cs 2 SnCl 6 as the resistive switching (RS) layer. These devices exhibited bipolar resistive switching behavior, robust endurance (>1600 cycles), retention time exceeding 10 4 seconds, and a large on/off ratio (>100). Furthermore, the ReRAM devices maintained uniform electrical performance under various bending angles and after continuous mechanical bending for more than 10 3 cycles. Additionally, multilevel data storage was achieved by modulating the compliance current. This study demonstrates the significant potential of Cs 2 SnCl 6 for applications in next-generation high-performance nonvolatile flexible memories and high-density storage devices.