Influence of Stoichiometric Deviation and Temperature on Electron-Attempt-to-Escape Frequency in Non-Stoichiometric Titanium Dioxide Thin Films
Abstract
The frequency formula for hopping electrons between randomly distributed oxygen vacancies within the variable-range-hopping model of Mott is derived, and the attempt-to-escape frequency is then extracted as a function of deviation from stoichiometry and temperature. These results are applied to nonstoichiometric titanium oxide thin films, with deviations from stoichiometry varying by 7 orders of magnitude relative to the stoichiometric counterpart and over a temperature range of 160–290 K. It is shown that the attempt-to-escape frequency decreases with increasing stoichiometry deviation and simultaneously weakly increases with increasing temperature. These results are qualitatively explained by using a microscopic view of an electron interacting with defective lattice vibrations.
Fields of Study & Subjects
Semiconductor materials and devices
Electron and X-Ray Spectroscopy Techniques
Ferroelectric and Piezoelectric Materials
Publication details
- Journal / source
- The Journal of Physical Chemistry C
- Publisher
- American Chemical Society (ACS)
- Volume
- 130
- Issue
- 22
- Pages
- 7805–7811
- Publication date
- 19 May 2026
- Language
- EN