ALD-Driven Ultrathin IGZO Neuromorphic Transistors with Defect-Engineered 1/ f Noise for Stable Multimodal Information Encryption
Abstract
Ultrathin neuromorphic transistors with sub-10 nm indium–gallium–zinc oxide (IGZO) channels and 20 nm Al 2 O 3 gate dielectrics have been fabricated via low-temperature (250 °C) atomic layer deposition (ALD), achieving conformal interfaces critical for reliable synaptic functionality. Low-frequency noise analysis reveals that the ALD-derived atomically flat interface (γ = 0.934) generates tunable shallow-level defects, acting as transient trapping sites and forming a controllable 1/ f noise source. The devices exhibit exceptional stability, with threshold voltage drift below 330 mV under 4500 s of bias/illumination stress and minimal variation (
Fields of Study & Subjects
Advanced Memory and Neural Computing
Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices
Publication details
- Journal / source
- The Journal of Physical Chemistry Letters
- Publisher
- American Chemical Society (ACS)
- Volume
- 17
- Issue
- 3
- Pages
- 772–779
- Publication date
- 9 January 2026
- Language
- EN