Multifield Modulation of Resistance States in a Spin Valve Based on Chiral Perovskites
Abstract
Spin valves are conventionally limited to binary resistance states controlled solely by magnetic fields, restricting their functional versatility and integration density. Here, we demonstrate a spin valve using a vertically aligned, chiral hybrid perovskite as the spacer, which integrates circularly polarized light as an additional control dimension. The device exhibits a magnetoresistance ratio of ∼5% at 10 K. Due to the intrinsic circular dichroism of the perovskite, circularly polarized light illumination induces a chirality-dependent photovoltaic effect that selectively modulates the baseline device resistance. Specifically, (S/R-NEA) 2 FA 2 Pb 3 Br 10 -based devices respond more strongly to left- and right-handed circularly polarized light, respectively. By combining magnetic field switching (parallel/antiparallel states) and optical control (dark, σ –, σ + illumination), we achieve up to six distinct, nonvolatile resistance levels within a single device. This work demonstrates that chiral perovskites are promising candidates for high-density multistate memory and novel spin-optoelectronic logic.
Fields of Study & Subjects
Advanced Memory and Neural Computing
Advanced Condensed Matter Physics
Magnetic properties of thin films
Publication details
- Journal / source
- The Journal of Physical Chemistry Letters
- Publisher
- American Chemical Society (ACS)
- Volume
- 17
- Issue
- 15
- Pages
- 4435–4441
- Publication date
- 1 April 2026
- Language
- EN