Multifield Modulation of Resistance States in a Spin Valve Based on Chiral Perovskites

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Authors: Ruiqing Li, Jiaying Feng, Jiakai Cai, Baorui Mao, Xuyang Sha, Hangwen Guo, Jingying Wang
Cited by: 1
References: 50

Abstract

Spin valves are conventionally limited to binary resistance states controlled solely by magnetic fields, restricting their functional versatility and integration density. Here, we demonstrate a spin valve using a vertically aligned, chiral hybrid perovskite as the spacer, which integrates circularly polarized light as an additional control dimension. The device exhibits a magnetoresistance ratio of ∼5% at 10 K. Due to the intrinsic circular dichroism of the perovskite, circularly polarized light illumination induces a chirality-dependent photovoltaic effect that selectively modulates the baseline device resistance. Specifically, (S/R-NEA) 2 FA 2 Pb 3 Br 10 -based devices respond more strongly to left- and right-handed circularly polarized light, respectively. By combining magnetic field switching (parallel/antiparallel states) and optical control (dark, σ –, σ + illumination), we achieve up to six distinct, nonvolatile resistance levels within a single device. This work demonstrates that chiral perovskites are promising candidates for high-density multistate memory and novel spin-optoelectronic logic.

Fields of Study & Subjects

Advanced Memory and Neural Computing Advanced Condensed Matter Physics Magnetic properties of thin films

Publication details

Journal / source
The Journal of Physical Chemistry Letters
Publisher
American Chemical Society (ACS)
Volume
17
Issue
15
Pages
4435–4441
Publication date
1 April 2026
Language
EN