Defect Engineering of HfO 2 -Based Thin Films for Simultaneously Achieving High Polarization and Excellent Fatigue Resistance: Mediating Double-Edged Role of Oxygen Vacancies

HfO 2 -based ferroelectric thin films can be used in advanced memory applications. The oxygen vacancies (V O ) present in HfO 2 are essential for stabilizing the ferroelectric phase; however, they are detrimental to fatigue resistance because of domain pinning and leakage path formation induced by V O aggregation. A defect engineering strategy was developed to reconcile the contradictory role of V O in HfO 2 -based ferroelectric thin films. At a 2-V operating voltage, the 8 mol % Ti-doped Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric thin film exhibited excellent ferroelectric properties and tolerated 1 × 10 10 endurance cycles. First-principles calculations and X-ray photoelectron spectroscopy characterization revealed that the Ti dopants did not affect the V O concentration in HZO, but they served as a fastener for binding V O, thus impeding the aggregation and diffusion of V O under cyclic electric fields. This study provides a viable pathway to resolve the double-edged role of V O and thus enhance fatigue resistance while maintaining high polarization.