Double Quantum Dots with Quenched Charging Energy in PbTe Nanowires

Nano Letters 2026

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Authors: Seth A. Byard, Maksim Gomanko, Adam Raynolds, Susheng Tan, Tongxie Zhang, S. X. Zhang, Sergey Frolov
DOI: 10.1021/acs.nanolett.5c04976
Cited by: 0
References: 42

Abstract

We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple points and by the spin degeneracy of all transport resonances at zero magnetic field. We show a 4-fold splitting of high-bias stability diagram triangles in an applied magnetic field to illustrate the lifting of this spin degeneracy. We also identify patterns of narrow transport resonances in these high-bias triangles and discuss their possible physical origins. Our results represent a step toward the realization of PbTe-based spin qubits.

Fields of Study & Subjects

Topological Materials and Phenomena Quantum and electron transport phenomena 2D Materials and Applications

Publication details

Journal / source
Nano Letters
Volume
26
Issue
2
Pages
723–729
Publication date
6 January 2026
Language
EN