Extrinsic and Intrinsic Nonlinear Planar Hall Effect in T d -MoTe 2

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Authors: Xueqi Hu, H. Wang, Haiyang Pan, Liheng An, Yue-Xin Huang, Naizhou Wang, Jingsheng Chen, Cong Xiao, Shengyuan A. Yang, Weibo Gao
Cited by: 1
References: 37

Abstract

T d -MoTe 2, a semimetallic material with broken inversion symmetry, allows a rich variety of nonlinear transport phenomena which may manifest intriguing quantum geometry of the band structure. Here, we report the observation of a nonlinear planar Hall effect in T d -MoTe 2 over a broad temperature range (2 to 150 K). The nonlinear Hall voltage scales quadratically (linearly) with the applied electric (magnetic) field and shows distinct angular dependence on the in-plane magnetic field: a cosine (sine) relationship when the electric field aligns with the a axis ( b axis). Combined first-principles calculations and scaling analysis of experimental data reveal two scaling terms, including an intrinsic contribution from Berry connection polarizability of band structure and an extrinsic nonlinear Drude-like contribution. This study not only expands the understanding of nonlinear Hall transport mechanisms in low-symmetry materials but also suggests potential applications in precision magnetic field sensing and electronic devices exploiting directional charge transport.

Fields of Study & Subjects

Topological Materials and Phenomena 2D Materials and Applications Organic and Molecular Conductors Research

Publication details

Journal / source
Nano Letters
Publisher
American Chemical Society (ACS)
Volume
26
Issue
2
Pages
730–736
Publication date
6 January 2026
Language
EN